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  1. Atomistic Simulation of Voltage Activation of a Truncated BK Channel

    This article has 2 authors:
    1. Zhiguang Jia
    2. Jianhan Chen
    This article has been curated by 1 group:
    • Curated by eLife

      eLife Assessment

      This valuable study addresses the structural basis of voltage-activation of BK channels using atomistic simulations of several microseconds, to assess conformational changes that underlie both voltage-sensing and gating of the pore. The findings, including movement of specific charged residues, combined with the degree to which these movements are coupled to pore movements, provide a solid basis for understanding voltage-gating mechanisms in this class of channels. This paper will likely be of interest to ion channel biologists and biophysicists focused on voltage-dependent channel gating mechanisms.

    Reviewed by eLife

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