A 31-Inch AMOLED Display Integrating a Gate Driver with Metal Oxide TFTs

Gate driver-on-array (GOA) circuits employing amorphous indium–gallium–zinc oxide (IGZO)-based thin-film transistors (TFTs) have been successfully utilized to generate the driving signals for the commercialization of active-matrix organic light-emitting diode (AMOLED) displays. The depletion-mode TFTs in GOA circuits can be completely turned off by the introduction of series-connected, two-transistor, dual low-voltage-level power signals. Simulation results demonstrate that a GOA exhibits high process stability with a threshold voltage margin from −5 V to +5 V. Furthermore, the GOA output characterization and mobility compensation effect are evaluated by the integration of the GOA and pixel in a 31-inch 4K AMOLED display. Experimental results demonstrate that full-swing driving pulses can be obtained with the GOA. Finally, the stripe mura in the display caused by mobility variation can be successfully eliminated by the introduction of GOA circuits.