Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide

Cryogenic electronic circuits are essential for interfacing, control, and error correction for scalable quantum computing platforms operating at millikelvin temperatures, yet face stringent thermal constraints demanding ultra-low power operation. Neuromorphic devices and circuits, emulating the spiking behavior of biological neurons, offer a compelling solution for achieving energy-efficient electronics under these conditions. Here, we report the gate-controlled negative differential resistance (NDR) in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). This NDR effect, arising from impact ionization involving dual dopant levels in SiC MOSFET structures, achieves an unprecedented on/off current ratio of 107, the highest reported among NDR devices to date. Meanwhile, the behavior of NDR can be fully controlled by the gate voltage of the MOSFET. Leveraging this gate-controlled NDR, we demonstrate programmable cryogenic spiking neuromorphic circuits, including sensory, logic, and integrate-and-fire neurons, with functionality tuned by gate or drain voltages. The established foundry-level manufacturability of SiC devices underscores their significant potential for integration into scalable cryogenic platforms for advanced sensing, computing, and quantum information applications.