Focused Ion Beam Induced Platinum Deposition with a Low Temperature Cesium Ion Source

In addition to precise milling, the deposition of material at a specific location on a sample surface is a frequently used process of Focused Ion Beam (FIB) systems. Here we report on the deposition of platinum with a new kind of cesium FIB in which the cesium ions are produced by a low-temperature ion source. The platinum was deposited at different acceleration voltages and ion beam currents. The deposition rate, the material composition and specific resistance were examined and compared with layers deposited at comparable settings with a standard gallium FIB. The deposition rate is found to be linearly dependent on current density. The rate is comparable for Cs+ and Ga+ under similar conditions, but the deposit has lower Pt content for Cs+. The specificresistance of the deposit is found to be higher for Cs+ than for Ga+, and decreasing with increasing acceleration voltage.