Development and Characterization of a Ribbon-Type Ion Beam Source Test Bench for Ion Implantation Applications

As semiconductor manufacturing processes become increasingly advanced and diversified, ion implantation processes capable of precisely controlling ion energy and implantation current are increasingly required, leading to growing demand for reliable ion source evaluation testbench. In this study, a ribbon-type ion beam source test bench is designed and constructed to investigate ion beam extraction characteristics for ion implantation applications. The developed test bench enables independent control of plasma generation conditions and ion beam extraction parameters, and employs a multi-channel Faraday cup as the primary diagnostic tool to directly measure spatially resolved ion beam current distributions. Unlike conventional evaluation approaches based solely on integrated beam current, the present system allows the analysis of beam focusing behavior using two-dimensional beam current profiles resolved along both the major and minor axes of the ribbon beam. Experiments are conducted by varying the extraction voltage, arc current, and electrode spacing, demonstrating that a limited extraction condition exists under which beam spreading is minimized in both axes. The results show that adjustments of extraction and discharge parameters are inherently accompanied by changes in beam focusing behavior in a three-electrode extraction system, highlighting the importance of spatially resolved diagnostics for evaluating ion source performance. The developed test bench thus provides a practical and flexible platform for assessing extraction characteristics and electrode configurations, while offering a foundation for future extensions incorporating additional diagnostics for comprehensive beam quality evaluation.