On the Complex Dielectric, Complex Electric Modulus, and Conductivity of Au/(Brushite + Monetite: Pvc)/n-si (Mps) Structures in the Wide Range of Frequency and Voltage

This study investigates the complex interplay between dielectric properties and the Au/(B + M-doped PVC)/n-Si organic interlayer within metal-polymer-semiconductor (MPS) structures. The work aims to comprehensively analyze the (B + M:PVC)'s impact on MPS dielectric, electric modulus, and conductivity properties, contributing to a deeper understanding of nanoscale materials in electronic devices. Impedance measurements of Au/n-Si Schottky structures with (B + M-doped PVC) composite-interlayer were conducted across a wide range of frequencies (2kHz-2MHz) and voltages (-3V/+4V). The exploration uncovers frequency-voltage dependence on crucial parameters like loss tangent ( tanδ ), complex permittivity ( ɛ* ), AC electrical conductivity ( σ _ac ), and complex electrical modulus ( M* ). Meanwhile, capacitance-conductance ( C-G/ω ) measurements were utilized to derive the graphs for ɛ' , ɛ” , M' , M'' , Z' , Z'' , σ _ac , and tanδ in relation to frequency and voltage variations. The interface states and polarization are effective at low and medium frequencies in both the reversal and depletion regions. In contrast, at high frequencies, the series resistance is effective only in the accumulation region. The obtained high dielectric interlayer ( ɛ' = 14,25) even at 2 kHz indicates that this organic interlayer can be successfully used in electronic devices instead of conventional insulators/oxides in terms of low cost/weight, easy performance, flexibility, high dynamic strength, and high energy storage capacity.