Accelerated Circuit Simulations and Standard Cell Library Characterization through Neural Network-based Transistor Modeling

nn-based transistor models have proven to be a promising solution to accelerate device modeling. Although these models demonstrated remarkable speedup in circuit simulations, they were not rigorously tested in complex tasks within standard EDA tool flows for chip design, which require very high transistor model precision to provide accurate results and converge properly. To investigate their full potential and promise, we develop NN-based transistor models that accurately predict the drain current and various charges for a \qty{3}{nm} nanosheet, and employ the models for a standard cell library characterization. This enables us to evaluate the accuracy and speedup under a very wide range of SPICE simulations, benchmarking our models against an industry-standard implementation. Since standard cell library characterization involves thousands of SPICE simulations, it serves as a great benchmark for transistor model quality and consistency. To further evaluate model accuracy, we also perform analog- and digital-level simulations for various complex circuits. Our experiments reveal that NN-based models are a valid alternative to existing transistor compact models, capable of producing accurate delay and power estimates with a much higher speed and convergence time compared to the conventional Verilog-A-based industry-standard (BSIM-CMG) transistor compact model. Our NNs achieve sub-\((0.11%)\) and \((0.76%)\) errors for delay and total power evaluation on a wide range of circuits, while taking up to 8 times less time during the standard cell library characterization. Additionally, we provide comprehensive information and guidance on NN accuracy, unveiling the relationship between NN size and its effect on circuit simulation precision.