Application of CNT Nanotechnology to Explore Ultra-Thin Devices with Flexible Transistors

Carbon Nano Tubes (CNTs) are a promising semiconductor material for Thin Film Transistors (TFT) devices due to their one-dimensional structure and exceptional characteristics. The TFTs are increasingly used in display products, but their limitations include high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability. This research work has designed, modelled, and optimized CNT-TFTs using the nanonet tool, resulting in superior results to existing devices. The fabricated devices produce about 1.3 nA , within the practical range of operating TFTs reported previously. Research in transistor technology focuses on improving transistor performance with reduced dimensions, scaling, and mobility, which are significant factors. Scaling limitations are eliminated by replacing silicon-based transistors' channel material with high-mobility materials like carbon nanotubes. The CNT-TFTs are ideal for drivers in contemporary Flat Panel Display (FPD) systems, maintaining a safe operating temperature while providing a high driving current. The present work analyzed the effect of carbon nanotube physical parameters on the current performance of CNT-TFTs. Findings showed that operating in short channel mode allows the device to display maximum current scaling, and the current is more dependent on ratio than tube length (L _S ). The orientation angle should be fixed at 30° or 60° , and further guidelines and limitations are discussed for future efficient device fabrication.