Enhanced RF/Analog Performances of Inverted T-shaped Stack Oxide GaAs FinFET

This paper proposes a new FinFET device that has an inverted T shaped stack oxide with GaAs as a fin material. The device is designed in such a way that it has enhanced analog performances in terms of transconductance, intrinsic gain, total gate capacitance (Cgg). Primarily, the performance of the proposed FinFET is compared with the conventional Silicon based FinFET in terms of on current (I _ON ), OFF current (I _OFF ) and the Subthreshold Swing (SS). The proposed device is also analysed for a wide range of temperature to study the stability and reliability. The different electrical parameters are analysed by varying different dimensional parameters such as gate length, fin width and fin materials. These enhancements collectively contribute to substantial gains in RF and analog operation, enabling higher frequency response, superior gain performance, and improved power efficiency.