The electro-optic and photonic properties of Th:ZnO thin films based photodiodes prepared by sol gel spin coating
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In this paper, we report the characteristics on undoped and Thiourea (Th) doped ZnO thin films synthesised on glass and p-Si substrates via sol-gel spin coating technique. It has been conducted a comprehensive investigation on the structural, electro-optic and morphological properties of Th doped ZnO (Th:ZnO) thin films. The structural properties of ZnO films with (002) and (101) preferential orientations are evaluated systemically as the hexagonal wurtzite from XRD analyses. The energy gap ( E g ) value of the Th doped ZnO thin films is found to be 3.25–3.26 eV from optical measurements. Th doped ZnO/p-Si heterojunction shows the Th wt.% content-nonsensitive rectification property, giving a ratio of 10 3 . The open circuit ( V oc ) value of 0.5% Th doped ZnO/p-Si heterojunction device is found to be 291 mV, decreasing with increasing Th ratio. The results show that the optimum doping or properly adjusting for ZnO is promising for the future of photovoltaic technology and display applications.
