Modulating MoS2 Conductivity through Nitrogen Doping: A Spray-Coating Approach to P-Type 2D Semiconductors

Molybdenum disulfide (MoS ₂ ) thin films have attracted increasing interest due to their exceptional electronic and optical properties. Although pristine MoS₂ typically exhibits intrinsic n-type conductivity, nitrogen doping provides a viable strategy to modulate its electronic behavior and induce a p-type transition. To experimentally realize this modification, nitrogen-doped MoS ₂ films were fabricated using a simple, cost-effective, and scalable spray-coating technique. Structural characterization using x-ray diffraction and Raman spectroscopy confirmed the polycrystalline nature of the films and the coexistence of mixed phase1T/2H-MoS ₂ . Back-gated field-effect transistors (FETs) based on the as-deposited N-doped MoS ₂ films exhibited clear p-type transport behavior, with a maximum hole mobility of 3.1 cm²·V⁻¹·s⁻¹. X-ray photoelectron spectroscopy confirmed the successful incorporation of nitrogen atoms, achieving a doping concentration of up to 4.83%. These findings highlight the potential of nitrogen-doped MoS₂ films synthesized via facile spray coating for future applications in low-cost, flexible, and scalable 2D electronic and optoelectronic devices.