A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application

Gas sensors have gain attention with the technological advancement as they are widely used in industries, health care, agriculture and environmental monitoring. The MOSFET based sensor are the mostly preferred in the sensing application due to their reduced power consumption, lower cost and higher sensitivity. The Nano wire with gate stacked gate all around configuration is estimated to dominate the modern on chip transistors with lower leakage current. The inhalation of ethanol vapor can cause several health risks i.e. respiratory irritation and intoxication. In this study, we have investigated a novel ethanol gas sensor using gate stack Junction-less Gate All Around (GS-JL-GAA) MOSFET with varying ethanol gas concentration as 1 ppm, 10 ppm, 50 ppm and 100 ppm. The operation of proposed gas sensor will be based on the change in the work function of palladium gate electrode with the variation in the concentration of ethanol gas. The ethanol vapor dehydrogenation takes place in presence of palladium catalyst at room temperature. Due to this the released hydrogen molecule forms a dipole at the palladium oxide interface and the work function of gate electrode alters. A rigorous simulation study on electrostatic, analog, radio frequency and linearity analysis of GS-JL-GAA MOSFET has been performed using ATLAS device simulator. It is observed that with the variation of ethanol gas concentration, the characteristics of GS-JL-GAA MOSFET varies. Further, the sensitivity of all these parameters has been investigated to access the impact of gas concentration on GS-JL-GAA MOSFET based gas sensor. The result reveals that the proposed gas sensor exhibits superiority in terms of sensitivity and improved sensor performance.