Effect of five independent pumping current division on semiconductor optical amplifier dynamics

For simulating semiconductor optical amplifier (SOA) performance and even in experimental applications that require SOA use, injected current can be easily changed in comparison with other operational parameters. Current simulation focuses on studying the latter main parameter then determining its effect on saturation power for fast dynamics with considerations included amplified spontaneous emission (ASE), carrier heating (CH), and spectral hole burning (SHB). A five-segment model is investigated, in which the SOA supplied with five independently injection currents. Application of such currents can be arranged in term as ascending or descending. The results show that the role of fast dynamics must be taken into account when performance \(\:\text{S}\text{O}\text{A}\) is simulated, especially when pulse width has been selected within sub picosecond duration range. The resulted width of saturated region is ranged (5.2–4.7) dBm\(\:\:\:\)in presence CH and SHB, and the latter two as well ASE, respectively, of pulse width \(\:{({\tau\:}}_{p})\) in the range \(\:(0.25-0.4)\text{p}\text{s}\). The interpretation of saturation power \(\:\left(3\text{d}\text{B}\right)\) to be closer if the injected current is descending arranged or further if ascendingly arranged can be understood by gain recovery time. Saturated region width was narrower in comparison with the case of \(\:\text{A}\text{S}\text{E}\) presence. The latter shifts the saturated region to lower power, and the shifting decreases with increasing pulse width. Also, \(\:\text{A}\text{S}\text{E}\) effect on linear unsaturated region to be reduced by \(\:3\text{d}\text{B}\). Our model attains an expansion of saturated regions that can be described as error-free ones, so it is a candidate to be used in an advanced modulation format.