Multichannel on-chip data transmission with InGaN/GaN multiple quantum wells devices

The high-speed, low-noise on-chip data transmission system holds significant application prospects in fields such as communications, artificial intelligence, and optical sensing. However, a sapphire-based device hinders the development of multichannel and on-chip data transmission due to its drawbacks in optical loss and crosstalk. Herein, we propose a novel InGaN/GaN multiple quantum wells (MQWs) based transceiver array (5×3)on a silicon platform for data transmission. Each communication unit comprises a coupled structure of a circular emitter and a square receiver. The InGaN/GaN device operates with emission spectra in the range of 475 nm to 575 nm, optical response spectra from 350 nm to 500 nm, fast response times (rise/decay) of 31.34/27.56 μs, and high systemcommunication bandwidth of 15.34 kHz. An open-eyed diagram of the communication unit is realized at a data rate exceeding 0.7 Mbps; thus, the overall data rate of the chip can be estimated to exceed 10.5 Mbps. Interestingly, experimental and simulation results indicate that the well-designed 3-micron intra-unit coupling distance and a 1 mm device spacing ensure that the communication channels can operate independently and are insensitive tointer-channel and environmental interferences, including extraneous sound signals and daylight. Finally, we demonstrate a two-channel communication process. One channel carried text information in ASCII code format, specifically the "NJUPTB20012616," while the other transmitted image information after being quantized into 0-255 gray coordinates. This scalability offers significant potential for high-capacity communication systems on a single chip, making it a promising solution for integrated optoelectronic applications.