Study on Electronic Transport and Optoelectronic Properties of Semiconductor 2D Ge₂Y₂ (Y = As, P, N)
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Several conceptual nanodevices based on the four-atom-layer α - and β -Ge 2 Y 2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge 2 Y 2 -based p-n junction diodes show a great rectifying effect with high rectification ratio. Their p-i-n junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge 2 Y 2 monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge 2 Y 2 monolayers, promising their extensive applications as candidates for future flexible semiconductor devices.
