Highly sensitive ITO/GeSiхOу/n-Si MIS photodiode with wide spectral range

In this study, we present a highly sensitive photodiode based on an ITO/GeSi _х O _у /n-Si structure without a p-n junction. The GeSi _х O _у dielectric layer plays a key role in reducing the dark current by four orders of magnitude compared to ITO/n-Si structures containing only native Si oxide, while the photocurrent decreases only slightly. High responsivity and specific detectivity covering the UV to IR range have been achieved, enabling this structure to be used for detecting optical signals over a wide spectral range.