High Sensitivity Design for Silicon-On-Insulator-Based Asymmetric Loop-Terminated Mach–Zehnder Interferometer

This work presents a novel design for an asymmetric loop-terminated Mach–Zehnder interferometer (a-LT-MZI) based on a silicon-on-insulator (SOI) platform, tailored for refractive index (RI) sensing applications. A significant advantage of incorporating the Sagnac loop into the MZI configuration is its ability to reduce the interferometer’s effective length by half, offering a more compact design. This makes it ideal for integration into miniaturized optical devices, enabling space-efficient configurations without compromising precision or performance. The proposed device, featuring a pathlength difference (∆L) of 24.35 µm demonstrates a sensitivity of 261 nm/RIU, which is further enhanced to 510 nm/RIU by incorporating a subwavelength (SWG) waveguide in the asymmetric sensing arm. This modification boosts light–matter interaction, resulting in a larger shift in the interference fringes and significantly improving the sensor’s performance.