Modeling Spin-Orbit Torque Driven Magnetization Dynamics in Emerging Magnetoresistive Devices: A Finite Element Method Approach
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We present a versatile three-dimensional finite element simulation framework that couples a charge and spin drift-diffusion formalism, extended to include interfacial spin–orbit coupling, with the Landau–Lifshitz–Gilbert equation. The resulting solver provides an efficient and accurate platform for modeling magnetization dynamics in emerging magnetoresistive devices such as SOT-MRAM. Its capabilities are demonstrated through simulations of current-induced magnetization switching with spin-orbit torques in a representative SOT-MRAM cell.
