Durability Evaluation of Antistatic Property in Ion-Implanted Materials

Ion implantation is a widely utilized technique for doping in semiconductor manufacturing, offering the distinct advantage of enabling mechanical and chemical surface modification while preserving the inherent bulk properties of the material. Due to these characteristics, ion implantation technology is applicable across various industrial sectors, including semiconductors, aerospace, and defense. By intentionally imparting electrical conductivity to the surfaces of insulators, it is possible to prevent electrostatic discharge (ESD) and mitigate damage to precision equipment. As the miniaturization of semiconductor processes accelerates, static electricity generated from ceramic and polymer insulator components has become a primary cause of product defects and degraded equipment reliability. While ionizers and carbon-additive materials are currently employed to alleviate these issues, they possess inherent limitations such as potential contamination and performance degradation under extreme environments. To address these challenges, RADPION Inc. has developed an ion-beam-based surface modification technology capable of directly imparting antistatic functionality to insulator surfaces, establishing a process that ensures stable surface conductivity without the risk of impurity incorporation. In semiconductor manufacturing, the use of metallic components is strictly limited to prevent metallic contamination. Consequently, ceramic (Al ₂ O ₃ ) and polymer (PTFE) materials, characterized by excellent thermal and chemical stability, are widely adopted for core components such as electrostatic chucks and wafer transport arms. However, these insulating materials are prone to accumulating surface charge during processing, and the resulting ESD phenomena serve as a major factor in device failure and reduced yield, making the implementation of effective antistatic technologies essential. In this study, a technology was implemented to simultaneously ensure antistatic functionality and environmental durability under harsh semiconductor process conditions by irradiating 50 kV nitrogen ion beams onto Al ₂ O ₃ and PTFE substrates to precisely control surface electrical conductivity. To verify the performance, several evaluations were conducted: reliability assessments based on temperature-dependent surface resistance measurements, thermal shock (temperature cycling) tests in accordance with the JEDEC JESD22-A104E:2014 standard, and Temperature-Humidity-Bias (THB) tests at 85°C and 85% RH. This research aims to enhance the functional stability of insulator materials through ion implantation and to establish a technical foundation for novel surface modification methods capable of ensuring reliability under diverse environmental conditions.