Room-temperature ferroelectricity in monolayer graphene on Fe2O3 film

We present a novel approach to electronic ferroelectricity by integrating monolayer graphene (MLG) with non-ferroelectric α-Fe ₂ O ₃ thin films. Unlike conventional ferroelectricity driven by ionic displacement, electronic ferroelectricity originates from charge dynamics. Electronic ferroelectricity has recently been observed in moiré systems, such as monolayer or few-layer graphene aligned with hexagonal boron nitride (hBN). However, ferroelectricity in these systems requires precise heterostructure alignment and low temperatures. Our proposed MLG/α-Fe ₂ O ₃ devices show robust electronic ferroelectricity without the need for moiré alignment and remain stable even at room temperature. The observed ferroelectric behavior in the proposed devices arises from electronic charge transfer between graphene and α-Fe ₂ O ₃ thin films, rather than lattice distortions. The polarization magnitude is continuously tunable with gate voltage, enabling multi-level non-volatile switching with high stability over repeated cycles. These findings provide MLG/Fe ₂ O ₃ heterostructures as a practical and stable platform for future electronic ferroelectric applications.