Surface Modification of Wide Bandgap Semiconductor GaN Using Femtosecond Laser Induced Periodic Surface Structuring LIPSS

The constant growth of power electronics field of technologies and applications demands ever growing research to find novel materials with characteristics to stand harsher work conditions and wider range of application, with lower costs and energy consumption [1-3]; which in turn requires the search for faster, cheaper and more effective machining techniques of these new materials. Currently we are witnessing the huge replacement of Silicon-based electronics with its better alternative, wide bandgap semiconductors, such as Silicon Carbide (SiC), Aluminum Nitride (AlN), and Gallium Nitride (GaN), to name a few. In our experiment, we investigate the surface modification of wide bandgap semiconductor crystal GaN by femtosecond laser irradiation, in different experimental parameters. The goal is to obtain a data base for optimal experimental conditions to achieve highly reproducible laser induced surface structures, also ca ,lled ripples, by means of femtosecond laser radiation. The results obtained and recorded are useful for future experiments involving micromachining of wide bandgap semiconductors, and can be applied for wide range of applications in industrial, medical and military fields.