Linearly Dispersing Carriers in Atomically Thin Antiferromagnetic NdTe3

The search for materials supporting ultrafast charge transport has been a longstanding goal in nanoelectronics. Since the isolation of graphene1, numerous efforts have focused on enlarging the class of linearly dispersive systems within the broader library of layered materials and on scaling their electronic properties down to the unit-cell limit. Here, we demonstrate that atomically thin layers can be isolated from antiferromagnetic NdTe3 down to a bilayer unit cell. This previously inaccessible preparation is enabled by Au-assisted exfoliation2,3. Magnetotransport measurements reveal that Shubnikov-de Haas oscillations persist in all thicknesses, indicating robust quantum phase coherence. Moreover, despite a suppression of the residual resistivity ratio and magnetoresistance compared to the bulk, we observe no significant modifications to the electronic structure, with dispersive linear bands persisting across all thicknesses. We anticipate that the observation of multiple spin-zero effects from distinct Fermi pockets further points to an enhanced effective g-factor that can be extended to other members of the RTe3 family.