Stacking pattern effect on the energy storage performance of PLZT-based relaxor- ferroelectric/antiferroelectric multilayer thin film capacitors prepared by sol-gel methods

Lead-based multilayer thin film capacitors with excellent energy storage performances have great application potential. However, the effect of stacking patterns on the dielectric behaviors has not been well investigated, especially for the multilayer thin films prepared by chemical solution methods. Here, the relaxor ferroelectric (RFE) (Pb _0.92 La _0.08 )(Zr _0.65 Ti _0.35 )O ₃ and antiferroelectric (AFE) (Pb _0.98 La _0.02 )(Zr _0.95 Ti _0.05 )O ₃ were chosen to construct diverse multilayer thin film capacitors with different RFE/AFE stacking patterns. Based on their crystal structure, dielectric features, and energy storage behaviors, the effect of stacking orders and AFE phase thicknesses on the capacitor performances were discussed from the perspectives of the positive and negative interface contribution. A superior recoverable energy density of 26.28 J cm ^− 3 was achieved at a breakdown strength of 3.19 MV cm ^− 1 , accompanied with thermal stability up to 170°C, frequency stability up to 2 kHz, and fatigue endurance after 10 ⁶ charging-discharging cycles. The experimental results and related discussion will support the research and the industrialization of multilayer thin film capacitors.