A perovskitelaser diode

Electrically pumped laser diodes based on halide perovskites have remained elusive despite the outstanding carrier dynamics and optical properties of such materials. Key challenges preventing their realization include inefficient cavity feedback, trap-assisted nonradiative recombination, ion migration, and carrier imbalance under high current densities. Here, we overcome these issues and demonstrate the first electrically pumped vertical-cavity surface-emitting laser (VCSEL) diode based on two-dimensional (2D) halide perovskites. Our strategy integrates high-reflectivity distributed Bragg reflectors, defect-passivated perovskite gain media with tailored additives, and balanced charge injection layers. The VCSEL exhibits a lasing threshold of 17.4 kA/cm ² , a full width at half maximum of 0.215 nm, and a directional far-field emission with a divergence angle of 8.5°. This milestone in perovskite optoelectronics will facilitate the development of compact, coherent light sources with multiple applications.