Thickness-dependence crystallinity and optical properties of β-In2S3 thin films synthesized by sulfurization in CVD
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In 2 S 3 thin films with controlled thickness were produced by sulfurizing thermally evaporated indium on SiO₂/Si substrates via chemical vapor deposition. X-ray diffraction confirms single-phase β-In 2 S 3 and shows a monotonic increase in crystallinity with thickness. Field-emission scanning electron microscopy reveals grain coarsening and smoother, more uniform surfaces in thicker layers. Energy-dispersive X-ray spectroscopy indicates near-stoichiometric In/S ratios with only trace oxygen and carbon. Annealing at 550°C and 100 Torr yields the best structural quality. Raman spectra display progressively stronger characteristic modes with thickness, consistent with enhanced lattice order. Photoluminescence exhibits sharp, intense excitonic emission in thicker films, indicating improved optical quality. The experimental results confirming, thickness jointly tune microstructure and defect density, enabling In 2 S 3 films well suited to optoelectronic applications-including solar cells, photodetectors, and LEDs-where high crystallinity and well-defined emission underpin device performance and reliability.
