Propagation of Thermoelastic Waves for a Rotating Semiconductor Material Subjected to Laser Beam and Initial Stress Effect

This study presents a novel photo-thermoelastic-mechanical framework for examining how waves move through elastic semiconductor materials. An elastic silicon (Si) medium is a half space, exposed to rotation, initial stress and laser pulse time photothermal excitation and thermal stress waves. The model incorporates the interaction between plasma and thermoelastic wave phenomena, analyzed within the framework of the Green and Naghdi's model type III of thermoelasticity theory. The proposed formulation is implemented for a semi- infinite half space domain. An eigenvalue approach analysis technique is employed to investigate their influence on the waves. Solving the two- dimensional problem involves employing the normal mode method. Fundamental physical parameters are determined based on mechanical stress, plasma conditions, thermal conditions. We obtain the field variables for a generic semi-conductor material in series form. We utilized MATLAB to plot the variation of physical variables, namely displacement components, the plasma distribution (the phase of carrier density), and temperature distribution with various parameters. The interaction between mechanical and thermal reactions is shown by graphic representations that show the changes in displacement and stress fields. These results offer important new information for the design of sophisticated engineering materials for thermoelastic applications as well as for the investigation of temperature, displacement, and stress.