Wafer-scale Low-Noise 266 nm Deep Ultraviolet All-Solid-State Laser

This paper addresses the demand for wafer-level low-noise deep ultraviolet lasers in precision machining and spectral detection fields by designing and constructing an all-solid-state 532 nm green light and 266 nm deep ultraviolet laser system. The system employs a BBO crystal as the frequency-doubling crystal, achieving efficient conversion of 532 nm green light to 266 nm deep ultraviolet light via external-cavity frequency-doubling technology. Experimental results demonstrate that at a 20 kHz repetition rate, the system outputs laser pulses with a width of 11 ns. The 532 nm laser achieves a peak power of 14 W, while the 266 nm deep ultraviolet laser delivers watt-level output (peak power 1 W). Both lasers exhibit excellent beam quality (M²x = 1.25, M²y = 1.15) and low noise characteristics, meeting the demands of high-stability applications.