Low-temperature nickel-induced crystallization of amorphous silicon thin films

Polycrystalline silicon thin films were obtained through nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD) onto glass substrates coated with a nickel oxide (NiO) layer. The NiO catalyst, introduced via spray pyrolysis under both high and low temperature conditions, facilitated the transformation of the amorphous phase into a polycrystalline structure. Structural, morphological, optical, and electrical properties of the resulting silicon films were systematically characterized and compared to those of monocrystalline silicon. Raman spectroscopy was employed to assess the degree of crystallization, revealing that optimal annealing conditions yielded a crystallization efficiency approaching 90%. The influence of annealing time on the microstructural evolution and material properties was thoroughly investigated. These results provide insight into the controlled fabrication of high-quality polycrystalline silicon films via metal-induced crystallization.