Study of single gate overlap source hetero gate dielectric TFET based Gas Sensor for hydrogen gas detection

A single gate overlap source hetero gate dielectric TFET ( SGOS-HGD TFET) based gas sensor is proposed for the application of hydrogen gas detection. The sensor is modeled by employing a catalytic metal (palladium) gate and HfO ₂ /SiO ₂ gate dielectrics where the work function of the gate deposited on top of the source and channel is changed after the absorption of the hydrogen. The performances of SGOS-HGD TFET based gas sensor are evaluated using Silvaco Atlas simulator. The results indicate that the ultra-high current sensitivity can reach 4.21×10 ⁹ when the gas molar concentration is 0 to 10 ^− 3 mol/L. Moreover, the lowest subthreshold slope is only 18.78 mV/decade when there is no gas. Therefore, the sensitivity of the SGOS-HGD TFET based gas sensor in terms of hydrogen gas detection is enhanced and the power consumption of the device is reduced, it could be a promising candidate to provide improved detection capabilities.