Heterogeneously Integrated Micro-ring with SnS₂ for Dual-functional Optical Modulation and Photodetection

Dual-functional devices capable of simultaneous modulation and photodetection offer enhanced flexibility for on-chip photonic integrated systems. However, fabricating such dual-functional devices remains challenging due to process compatibility issues, device instability, and insufficient light-matter interaction enhancement. As two-dimensional materials exhibit unique advantages in on-chip heterogeneously integrated photonic devices, particularly modulators and photodetectors, we demonstrate a dual-functional few-layer SnS ₂ integrated above a silicon-on-insulator (SOI) micro-ring resonator. By the electrode-engineered design, we achieve simultaneous light modulation and detection without external gate control or heterojunctions, which significantly simplifies fabrication procedures. The device achieves modulation depth of 23 dB and exhibits hot-carrier-assisted infrared photodetection with the responsivity of 0.38 A/W at a bias voltage of − 2 V. This integrated architecture can not only reduce the footprints of photonic integrated circuits but also facilitate the real-time monitoring of modulation states via electrical feedback, thereby enhancing operation stability of the on-chip photonic computing systems.