Analysis of e-beam deposited CeO2 films as ARC material for Silicon based solar cells
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In this work performance of silicon based solar cell is investigated for its high efficiency and low cost. Efficiency can be enhanced by the induction of an AR layer to solar cell. In this manuscript impact of AR coating on efficiency enhancement of c-Si solar cell is discussed. Cerium oxide (CeO 2 ) films, that were deposited in oxygen atmosphere by the PVD method has been chosen for AR material for silicon solar cell. In this regard, a PCID stimulator is used to determine the optical and electrical parameters of the solar cell after the application of AR layer. CeO 2 films deposited at 300 K, 473 K, 573 and 573 K substrate temperature is chosen for Single AR coating. Experimental refractive index is used to find the effect of these layers on performance of solar cell. Optical and electrical properties of these films are studied for 500–1200 nm wavelength. It is found that optical and electrical properties of AR material depends on substrate temperature. Different AR materials were used for comparative analysis like Al 2 O 3 , MgO, SiO 2 , TiO 2 , TIN, ZnS, MgF 2 , ZnSe, and SIC with CeO 2 in the search for the maximum efficiency of silicon solar cells. Simulation results verified that solar cell shows best performance with CeO 2 films at 300 K with substrate temperature. Maximum efficiency of 19.7% with Jsc of 37.4 mA/cm 2 and Voc of 0.6320 V was observed with CeO 2 film at 300 K. Solar cell performance parameters including η ,Voc, Jsc , EQE, and R(%) were graphically analyzed. The optimized structure may have a significant influence on the future development of advanced photovoltaic devices.
