Ultra-broadband near- to mid-infrared electro-optic modulator on thin-film lithium niobate

Read the full article See related articles

Listed in

This article is not in any list yet, why not save it to one of your lists.
Log in to save this article

Abstract

The escalating capacity limitations of conventional near-infrared telecommunication bands have spurred urgent investigations into full-spectrum optical communication systems spanning from the near-infrared to mid-infrared regimes. This has motivated the development of optical components combining broadband bandwidth with high-speed operation. Thin-film lithium niobate (TFLN) modulators, while exhibiting state-of-the-art performance in voltage-length product, optical loss, and electro-optic (EO) bandwidth at telecommunication wavelengths, face challenges in achieving broad operational bandwidth due to waveguide dispersion and velocity mismatch at longer wavelengths. Here, we present a Mach-Zehnder EO modulator comprising two adiabatic power splitters and a high-bandwidth phase shifter, achieving an unprecedented 800-nm operational bandwidth that covers the full optical fibre communication spectrum and extends into the 2-µm mid-infrared band. The fabricated modulator demonstrates > 67 GHz EO bandwidth in both O/C-bands and 48 GHz (detector-limited) in the 2-µm band. This device enables single-lane transmission exceeding 100 Gbaud across O-, C-, and 2-µm bands. Notably, we achieve 100 Gbaud OOK and 65 Gbaud PAM-4 transmission in the 2-µm band - the highest rates reported for this spectral region. This breakthrough establishes TFLN as a compelling platform for multispectral photonics, bridging conventional telecom infrastructure with emerging 2-µm technologies for next-generation full-spectrum optical communications.

Article activity feed