Influence of Annealing on Indicatory Surface of Anelastic-Elastic Body of Gesi

The temperature-dependent behavior of internal friction Q ^− 1 and elastic modulus Е of Ge _0.95 Si _0.05 was investigated and represented through the construction of “indicatory surface of anelastic-elastic body”. On temperature dependence of the elastic modulus E and internal friction Q ^− 1 (“indicatory surface of anelastic-elastic body”) of Ge _0.95 Si _0.05 found out the dominant internal friction maximum Q ^− 1 _M3 at temperature Т _М3 ≈ 510 К. In the area of existence of the internal friction maximum was the relaxation of the elastic modulus ΔE/E . The absolute values of the elastic modulus increased during annealing, confirming the hardening of Ge _0.95 Si _0.05 crystal. Internal friction maximum Q ^− 1 _М1 at temperature T _М1 ≈ 387 K and internal friction maximum Q ^− 1 _М2 at temperature T _М2 ≈ 421 K were discovered due to the process of changing the vacancies V number in the vacancy complexes V - V - V under the influence of variable ultrasound deformation ε _US after annealing at temperature T _an ≈ 750 K.