Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor

In this article, a novel recessed bridge-gate engineered quaternary InAlGaN/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron gas (2DEG) at the heterointerface of In0.05Al0.275GaN/GaN. The 2DEG created at the heterointerface is of the order of 10 13 cm-2. The device has undergone analysis of DC characteristics and small-signal AC characteristics using Silvaco TCAD simulations. The DC characteristics result in threshold voltage of-1V, and saturated drain current of 0.37 A/mm. Lattice heat thermal modeling is carried out with the DC characteristics to understand the device behavior during self-heating effects. The RF characteristics obtained from AC simulations include cutoff frequency (ft) of 8 GHz and maximum frequency of oscillation (fmax) of 30 Hz. Maximum stable gain (Gms) up to 50 GHz is obtained where the HEMT is unconditionally stable. The proposed HEMT is suitable for power electronics and RF applications.