Conductance of quantum dots with a delta potential barrier
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In the present paper, using the three-band Kane model, we have investigated the conductance of electrons by a spherical narrow penetrable δ-type potential barrier in A3B5-type semiconductors. Using the Kane equations with the continuity conditions of the wave functions and flux discontinuity at the interface of spherical dots, we have analytically calculated the phase shift and the tunneling amplitude for the semiconductor quantum dots. Using the Landauer–Buttiker formalism, we find an expression for the conductance at zero temperature. It has been shown that the quasi-bound states appear as peaks in the cross-section. PACS: 73.21Hb
