Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET

In this study, a heterojunction gate-all-around nanowire tunnel field-effect transistor (HJ-GAA-NWTFET) with a channel length of 100 nm is designed, attaining a high I _ON /I _OFF ratio of approximately 10 ¹³ and an exceptionally low off-state current ( I _OFF ) of around 10 ^− 19 A. The RF performance metrics of the proposed HJ-GAA-NWTFET are compared with those of a conventional gate-all-around nanowire tunnel field-effect transistor (GAA-NWTFET), and proposed TFET is showing enhanced performance in terms of electrical and biosensing parameters. The gate-all-around architecture significantly improves I _OFF suppression and enhances the I _ON /I _OFF ratio owing to its robust gate control. Furthermore, the integration of a heterojunction enhances the on-state current ( I _ON ), making HJ-GAA-NWTFETs a viable option for sophisticated low-power and high-performance device applications. The proposed dielectric-modulated HJ-GAA-NWTFET based biosensor exhibits a reduced threshold voltage and subthreshold swing (SS), making it suitable for low-power biosensor applications.