Analytical solutions of fully coupled photothermoelastic interaction in semiconductor half-space

This study presents a novel theoretical model linking thermal dynamics, plasma waves, and elastic vibrations to investigate wave propagation in semiconductors induced by photo-thermal effects. The analysis is based on a fully coupled of generalized photothermoelastic model tailored for semi-conductor materials. The boundary surface, assumed to be traction-free, is caused by exponentially decaying heat flux. The research focuses on an isotropic, elastic semiconductor with uniform thermoelastic properties. It examines the interactions among plasma and thermalelastic waves generated by sharply focused laser beams with modulated intensity. Analytical solutions were derived in the Laplace-transformed domain using the eigenvalue method, providing insights into the wave behavior. Solutions are obtained using the integral transform technique, with Laplace transform inversions executed via the Gaver-Stehfest numerical method. The study focuses on Silicon as the material of interest, presenting and discussing the numerical results in detail, supported by graphical representations to enhance understanding.