Impact of Nitridation on the Structural, Optical, and Morphological Properties of Solvothermally Synthesized Gallium Nitride Nanoparticles

Gallium nitride (GaN) nanoparticles were synthesized using the solvothermal method and subsequently annealed under nitrogen conditions. Structural analysis via X-ray diffraction revealed characteristic hexagonal wurtzite reflections with minor gallium oxide impurities in the unnitridized sample. FTIR spectroscopy confirmed the presence of Ga≡N bonds and other functional groups. Optical characterization indicated higher bandgap in nitridized GaN, attributed to surface states or defects. SEM images showed increased surface roughness and a feathery morphology in nitridized nanoparticles, suggesting enhanced defect concentration.