Electrophysical Properties of Al-pge(P-i-n)-au and Au-nsi-al Structural Detectors Prepared on the Basis of Si and Ge

The scientific significance of the research results is that the energetic properties of Si and Ge , which are the main elements for the preparation of semiconductor detectors based on the Al-pGe(p-i-n)-Au and Au-nSi-Al structures that reflect α and β radiation, and the electrophysical characteristics of the detectors were studied. Such results are explained by their importance in the practical application of various semiconductor devices. The practical significance of the research results lies in the development and implementation of detectors with Al-pGe(p-i-n)-Au and Au-nSi-Al structures based on semiconductor monocrystalline silicon and germanium.