A high-performance all-silicon photodetector enabling telecom-wavelength detection at room temperature

Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics ¹ . Telecom-wavelength photodetectors, operating near 1550 nm, are indispensable in PICs, where they enable the sensitive and low-noise conversion of optical signals to electrical signals for efficient data processing. While silicon is ideal for passive optical components, its limited absorption in the optical telecommunication range (1260–1625 nm) typically necessitates integrating an alternative material, such as germanium ² , for photodetection — a process that introduces significant fabrication challenges ³ . Here, we present a high-performance, all-silicon photodetector, grating- and waveguide-coupled, which operates at room temperature within the optical telecom C band. By introducing deep-level impurities into silicon at concentrations close to the solid-solubility limit, we enable efficient sub-bandgap absorption without compromising recombination carrier lifetimes and mobilities. This detector achieves a responsivity of 0.56 A/W, a quantum efficiency of 44.8%, a bandwidth of 5.9 GHz, and a noise-equivalent power of 4.2×10 ^− 10 W/Hz¹ ^/ ² at 1550 nm, fulfilling requirements for telecom applications. Our approach provides a scalable and cost-effective solution for the monolithic integration of telecom-wavelength photodetectors into silicon-based PICs, advancing the development of compact photonic systems for modern communication infrastructures.