Zero-Disturbance Sensitization Strategy for Ultra-High- Efficiency Cr3+ Near-Infrared Phosphors
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Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are in urgent demand for high-efficiency NIR phosphors, and Cr 3+ -activated garnet-type materials have emerged as promising candidates. In this work, a novel zero-disturbance sensitization strategy was proposed to significantly enhance the luminescence performance of Cr 3+ -doped Ca 3 Gd 2 Ga 2 Ge 2 O 12 (CGGGO) NIR phosphors by introducing Tb 3+ as an efficient energy transfer mediator. Tb 3+ co-doping further boosts the emission intensity by 28% under 260 nm excitation and 14% under 450 nm excitation, raising the IQE to 97% without altering the emission peak position, spectral shape, or fluorescence lifetime, fully verifying the zero-disturbance nature of the sensitization effect. A dual-pathway energy transfer mechanism was proposed to elucidate the enhanced energy utilization efficiency, and crystal-field analysis confirmed the moderate crystal field environment of Cr 3+ favorable for broadband NIR emission. Finally, a NIR pc-LED device fabricated with the optimal co-doped phosphor demonstrates stable electroluminescence, high output power, and excellent night-vision imaging performance. This work not only develops a high-performance Cr 3+ -activated NIR phosphor but also provides a universal zero-disturbance sensitization strategy for designing efficient luminescent materials for advanced NIR optoelectronic applications.
