Dynamically Reconfigurable XNOR/IMP Logic Based on Dual-Mechanism Operation in an Electrically Tunable Two-Dimensional Heterojunction

Reconfigurable logic is crucial for future adaptive computing but are challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe₂/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions—XNOR and IMP—simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler–Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpins the device's multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing.