Determination of Superluminescent Diode Junction Temperature via Static Modulated Fourier-Transform Spectrometer

Accurate and rapid measurement of junction temperature is critical for optimizing the performance and ensuring the longevity of a super luminescent diode. However, due to diverse diode structure, direct measuring and monitoring the junction temperature of a super luminescent diode are often challenging and impractical. We propose a non-invasive methodology to precisely determine the junction temperature and spectral characteristics of a super luminescent diode. This method utilizes a modified static modulated Fourier-transform spectrometer alongside a generalized analyzing expression derived from Gaussian components. Fast acquisition of spectral information is achieved through the modified static modulated Fourier-transform spectrometer and analyzing method. The proposed model exceptional accuracy, yielding an average coefficient of determination R2, of 0.99 across a range of operating currents and junction temperatures. Our analysis reveals a distinct linear correlation between the extracted fitting parameters-specifically, the carrier temperature, the spectral shape parameter and the physical junction temperature. These findings demonstrate that critical internal physical conditions of the diode can be accurately inferred directly from its measured spectrum, providing a robust tool for device characterization.