The Compact Model Synthesis for the RADFET Device

This article presents a compact model for the radiation sensitive field-effect transistor (RADFET). The model represents the basic IV-curve of the MOSFET device. Threshold voltage shift dependency on absorbed dose and gate bias, gate tunneling current, gate radiation current, dose accumulation and fading. The model represents the high-field effects in the gate dielectric of RADFET device. The Fowler-Nordheim gate tunneling current and radiation induced gate current are taken into account in the model. The model allows to determine the radiation induced charge during the RADFET operation under high-field injection mode. This improves the precision of the accumulated dose readout. The proposed model is ready for integration in any SPICE compatible circuit simulators. The presented compact model is able to represent any RADFET device including devices with high-k gate dielectrics. The model was designed exclusively using open-source circuit simulation tools.