SiGe BiCMOS Output Stages of High-Temperature Operational Amplifiers

We propose 24 modifications of buffer amplifiers for use as output stages in micropower operational amplifiers, designed for the SiGe BiCMOS technological process. This process enables the fabrication of heterojunction n-p-n bipolar transistors and n- and p-channel CMOS transistors. A cataloging and visualization program has been developed for the analyzed circuits, which differ in parameters such as input/output resistances, quiescent current consumption, biasing network design, maximum positive/negative output voltage amplitudes, etc. An example of computer simulation results for static operating points and amplitude characteristics in Cadence is provided at two temperatures: 27°C and 250°C. The proposed circuit solutions are recommended for applications in various analog microelectronic devices operating under high-temperature conditions.